{"product_id":"eupec-bsm200ga170dn2se3256-igbt-transistor-module","title":"EUPEC BSM200GA170DN2SE3256 IGBT Transistor Module","description":"\u003cp\u003eThe \u003cstrong\u003eEUPEC BSM200GA170DN2SE3256\u003c\/strong\u003e serves as the primary \u003cstrong\u003eBSM200GA170DN2SE3256\u003c\/strong\u003e Transistor Module utilized to execute high-power switching, phase commutation, and discrete current regulation across heavy industrial drive platforms.\u003c\/p\u003e\n\u003ch3\u003eHardware Specifications\u003c\/h3\u003e\n\u003cfigure class=\"table\"\u003e\n\u003ctable\u003e\n\u003cthead\u003e\n\u003ctr\u003e\n\u003cth\u003e\u003cstrong\u003eParameter\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eSpecification\u003c\/strong\u003e\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003c\/thead\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003eModel\u003c\/td\u003e\n\u003ctd\u003eBSM200GA170DN2SE3256\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eBrand\u003c\/td\u003e\n\u003ctd\u003eEUPEC (Infineon Technologies)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOrigin\u003c\/td\u003e\n\u003ctd\u003eGermany\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eWeight\u003c\/td\u003e\n\u003ctd\u003e0.79 lbs\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDimensions\u003c\/td\u003e\n\u003ctd\u003eSingle switch topology module housing with integrated power terminals\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating Temp\u003c\/td\u003e\n\u003ctd\u003eCalibrated for standard power electronic junction windows (up to 125 deg C)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePower Consumption\u003c\/td\u003e\n\u003ctd\u003eDependent on switching frequency and gate drive circuit design\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCollector-Emitter Voltage ($V_{ces}$)\u003c\/td\u003e\n\u003ctd\u003e1700 V\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eContinuous DC Collector Current ($I_c$)\u003c\/td\u003e\n\u003ctd\u003e200 A\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eModule Configuration\u003c\/td\u003e\n\u003ctd\u003eSingle switch (GA topology) with integrated fast free-wheeling diode\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eLifecycle Status\u003c\/td\u003e\n\u003ctd\u003eDiscontinued by manufacturer\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003c\/figure\u003e\n\u003ch3\u003eIndustrial Control and Drive Integration\u003c\/h3\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003cstrong\u003eV\/Hz and Field-Oriented Vector Control:\u003c\/strong\u003e This 1700 V high-power module serves as a core switching element within the inverter stage of variable frequency drives. It responds precisely to pulse-width modulation (PWM) commands, enabling accurate V\/Hz and field-oriented vector control profiles to govern large AC induction or permanent magnet synchronous motors under heavy loads.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eHarmonic Distortion Suppression:\u003c\/strong\u003e The integrated fast recovery free-wheeling diode exhibits optimized reverse recovery charge traits. This internal geometry minimizes current spikes during inductive load commutation, assisting external line reactors and snubber networks in maintaining rigid harmonic distortion suppression across the local DC bus matrix.\u003c\/li\u003e\n\u003cli\u003e\n\u003cstrong\u003eThermal Heat Sink Dissipation Profiles:\u003c\/strong\u003e The 0.79 lbs module features an integrated copper baseplate designed for direct coupling to aluminum or liquid-cooled cooling surfaces. Applying a uniform layer of thermal paste maximizes structural heat transfer, keeping internal silicon junction temperatures stable during continuous 200 A conduction cycles.\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch3\u003eFrequently Asked Questions\u003c\/h3\u003e\n\u003cp\u003eQ: What technical tracking behavior manifests within the module if the gate drive voltage drops below the recommended 15 V threshold?\u003c\/p\u003e\n\u003cp\u003eA: A drop in gate voltage forces the IGBT out of full saturation and into its linear operating region. This severely increases the collector-emitter saturation voltage ($V_{CE(sat)}$), causing rapid thermal energy buildup inside the silicon die that will destroy the module via thermal runaway if gate under-voltage protection does not trip the main breaker.\u003c\/p\u003e\n\u003cp\u003eQ: Can the main power terminal screws be torqued or checked while the inverter's DC bus capacitor bank is actively charged?\u003c\/p\u003e\n\u003cp\u003eA: No. The terminal busbars hold dangerous residual electrical potentials up to 1700 V even after primary power is removed. Attempting to service the terminals without discharging and verifying a zero-energy state on the DC bus will trigger a catastrophic short-circuit arc flash, ruining the module and risking severe injury.\u003c\/p\u003e","brand":"EUPEC","offers":[{"title":"Default Title","offer_id":45136245194867,"sku":"DS307\/SCH\/V2\/G","price":410.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0644\/4348\/2227\/files\/screenshot_2026-06-26_16-42-55.png?v=1782466409","url":"https:\/\/www.dcssupplier.com\/ar\/products\/eupec-bsm200ga170dn2se3256-igbt-transistor-module","provider":"DcsSupplier Limited","version":"1.0","type":"link"}