{"product_id":"ge-is200ehpag1dcb-gate-pulse-amplifier-boards","title":"GE IS200EHPAG1DCB Gate Pulse Amplifier Boards","description":"\u003cp\u003eConfigured for signal amplification and semiconductor gating execution in GE EX2100 Excitation Control platforms, the \u003cstrong\u003eGE IS200EHPAG1DCB\u003c\/strong\u003e (\u003cstrong\u003eIS200EHPAG1DCB\u003c\/strong\u003e Gate Pulse Amplifier Board) provides direct physical\/electrical execution. The module conditions and intensifies six discrete gate firing pulses received from the associated ESEL logic node, transforming them into high-current triggering commands to actuate up to six silicon-controlled rectifiers (SCRs) in the power conversion bridge while operating within a 10 VDC to 30 VDC input window.\u003c\/p\u003e\n\u003ch3\u003eHardware Specifications\u003c\/h3\u003e\n\u003cfigure class=\"table\"\u003e\n\u003ctable\u003e\n\u003cthead\u003e\n\u003ctr\u003e\n\u003cth\u003e\u003cstrong\u003eParameter\u003c\/strong\u003e\u003c\/th\u003e\n\u003cth\u003e\u003cstrong\u003eSpecification\u003c\/strong\u003e\u003c\/th\u003e\n\u003c\/tr\u003e\n\u003c\/thead\u003e\n\u003ctbody\u003e\n\u003ctr\u003e\n\u003ctd\u003eModel\u003c\/td\u003e\n\u003ctd\u003eIS200EHPAG1DCB\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eBrand\u003c\/td\u003e\n\u003ctd\u003eGeneral Electric (GE)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOrigin\u003c\/td\u003e\n\u003ctd\u003eUnited States of America (USA)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eWeight\u003c\/td\u003e\n\u003ctd\u003e0.8 kg\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eDimensions\u003c\/td\u003e\n\u003ctd\u003e16 cm x 16 cm x 12 cm\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eOperating Temp\u003c\/td\u003e\n\u003ctd\u003e-40 to +70 deg C\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePower Supply Input\u003c\/td\u003e\n\u003ctd\u003e24 VDC nominal (10 VDC to 30 VDC acceptable input range)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSystem Power Source\u003c\/td\u003e\n\u003ctd\u003e125 VDC nominal input derived from the EPDM module\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003ePower Consumption\u003c\/td\u003e\n\u003ctd\u003e8 W typical (load-dependent)\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eSeries Compatibility\u003c\/td\u003e\n\u003ctd\u003eMark VI IS200 Assembly Matrix \/ EX2100 Systems\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eFunctional Revision\u003c\/td\u003e\n\u003ctd\u003eRevision D, Variant 1\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eFiring Pulse Capacity\u003c\/td\u003e\n\u003ctd\u003eSix (6) independent gate firing pulses\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCommunication Ports\u003c\/td\u003e\n\u003ctd\u003eRS-232, RS-485, and Modbus RTU \/ ASCII networks\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eHardened Protections\u003c\/td\u003e\n\u003ctd\u003eOvercurrent, overvoltage, short-circuit, and reverse polarity\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eIntegrated Monitoring\u003c\/td\u003e\n\u003ctd\u003eAirflow tracking and localized temperature sensors\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003ctr\u003e\n\u003ctd\u003eCore Product Type\u003c\/td\u003e\n\u003ctd\u003eExciter Gate Pulse Amplifier Board Assembly\u003c\/td\u003e\n\u003c\/tr\u003e\n\u003c\/tbody\u003e\n\u003c\/table\u003e\n\u003c\/figure\u003e\n\u003ch3\u003eBackplane Bus Communication Velocity and I\/O Density Scaling\u003c\/h3\u003e\n\u003cp\u003eThe IS200EHPAG1DCB features an EMI-hardened design tailored to suppress high-frequency induction fields, ensuring that severe electromagnetic noise does not degrade local backplane bus communication velocity metrics during dynamic load shedding. Gating commands transition through specialized trace layers to guarantee microsecond execution windows. The board facilitates modular system I\/O density scaling routines by combining its six-channel gating output structure with onboard environmental tracking networks—specifically monitoring airflow velocities and temperature parameters locally. This autonomous tracking maintains full firmware flash compatibility with the host ESEL logic array, enabling instantaneous safety overrides without generating processing overhead or data backlogs across the primary rack controller.\u003c\/p\u003e\n\u003ch3\u003eFrequently Asked Questions\u003c\/h3\u003e\n\u003cp\u003eQ: How does the dual power configuration (24 VDC nominal vs. 125 VDC nominal) distribute inside the board?\u003c\/p\u003e\n\u003cp\u003eA: The 24 VDC nominal input (10 to 30 VDC range) powers the low-voltage logic gates, communication ports, and environmental sensors. The 125 VDC nominal feed sourced from the Excitation Power Distribution Module (EPDM) supplies the dedicated high-energy storage capacitors needed to generate the high-current amplification pulses that fire the external SCR thyristors.\u003c\/p\u003e\n\u003cp\u003eQ: What protective measures execute automatically if an output short-circuit occurs on a gating channel?\u003c\/p\u003e\n\u003cp\u003eA: The board incorporates hardware-level short-circuit and overcurrent protection loops on each gate firing pulse channel. Upon detecting an electrical short across the gate-cathode pilot wires, the affected channel clamps its output current immediately to isolate the low-voltage pulse amplification circuits, logs a hardware fault, and flags the condition via the Modbus interface.\u003c\/p\u003e","brand":"GE","offers":[{"title":"Default Title","offer_id":45052986949747,"sku":"IS200EHPAG1DCB","price":88.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0644\/4348\/2227\/files\/screenshot_2026-05-08_17-22-02_ae139f93-2931-43a9-a1da-606c7aad041a.png?v=1779938854","url":"https:\/\/www.dcssupplier.com\/products\/ge-is200ehpag1dcb-gate-pulse-amplifier-boards","provider":"DcsSupplier Limited","version":"1.0","type":"link"}